ACTIVATION OF ELECTRICAL CARRIERS IN ZN-IMPLANTED INP BY LOW-POWER PULSED-LASER ANNEALING

Low-power pulsed-laser annealing was applied to Zn+-implanted InP samp les. In order to avoid surface oxidation during the treatment, the las er irradiation was carried out in inert ambient of nitrogen at differe nt pressures. The analytical techniques used include Rutherford backsc attering spectroscopy, reflection high energy electron diffraction, an d electrical measurements. The highest carrier activation, about 80%, was achieved at the same laser power density (6.5 MW/cm(2)) at which t he best crystal recovery was obtained. (C) 1997 American Institute of Physics.