CHARACTERIZATION OF RESIDUAL DEFECTS IN CUBIC SILICON-CARBIDE SUBJECTED TO HOT-IMPLANTATION AND SUBSEQUENT ANNEALING

Defects introduced in epitaxially grown cubic silicon carbide (3C-SiC) by implantation of nitrogen (N-2(+)) and aluminum ions (Al+) at a wid e temperature range from room temperature to 1200 degrees C were studi ed using electron spin resonance (ESR), photoluminescence (PL), and po sitron annihilation spectroscopy (PAS). It is found that while hot-imp lantation reduces paramagnetic defects and improves the crystallinity of implanted layers, it causes the simultaneous formation of vacancy c lusters. These results can be explained in terms of the migration and combination of point defects during hot-implantation. The formation an d reduction of defects by hot-implantation are discussed in connection with implantation temperature, dose, and ion species. Postimplantatio n annealing of: the defects in hot-implanted 3C-SiC was also examined by the ESR, FL, and PAS technique. The influence of residual defects o n the electrical properties of implanted 3C-SiC layers is also discuss ed. (C) 1997 American Institute of Physics.