KINETICS OF ION-BEAM-INDUCED INTERFACIAL AMORPHIZATION IN SILICON

This article reviews modeling and experimental results of ion-beam-ind uced interfacial amorphization (IBIIA) in silicon. It is shown that th is process differs from the well-known bulk amorphization with regard to the critical energy density approach and the evolution of the rough ness of the amorphous/crystalline interface during ion irradiation. IB IIA depends on the substrate temperature, ion flux, and nuclear energy deposition at the amorphous/crystalline interface, which is discussed in detail. Within this scope, new results about the temperature and i on Aux dependence of IBIIA are presented that cannot be explained by p revious models. Therefore, a new model based on ballistic transport ef fects that allows one to understand experimental results at low temper atures is proposed. According to this concept IBIIA is controlled by t hree processes interacting at the amorphous/crystalline interface: an athermal ion-beam-induced defect generation, a thermally activated rec ombination of defects, and an athermal transport of defects towards th e amorphous/crystalline interface as a result of ballistic processes. It is speculated that these defects are mainly interstitials and vacan cies involved in those processes. (C) 1997 American Institute of Physi cs.