GROWTH-MECHANISM AND ELECTRICAL-PROPERTIES OF METALLIC-FILMS DEPOSITED ON SILICONE OIL SURFACES

Citation
Hl. Ge et al., GROWTH-MECHANISM AND ELECTRICAL-PROPERTIES OF METALLIC-FILMS DEPOSITED ON SILICONE OIL SURFACES, Journal of applied physics, 82(11), 1997, pp. 5469-5471
Citations number
11
Journal title
ISSN journal
00218979
Volume
82
Issue
11
Year of publication
1997
Pages
5469 - 5471
Database
ISI
SICI code
0021-8979(1997)82:11<5469:GAEOMD>2.0.ZU;2-1
Abstract
The microstructure and the growth mechanism of the films, which were d eposited on silicone oil surfaces by the rf-magnetron sputtering metho d, were studied systematically. It is found that, at the fixed inciden t rf capacity, the growth rate is not a constant and it depends on bot h the nominal film thickness and the substrate temperature. The film s tructure at the micrometer scale is highly sensitive to the substrate temperature. The de resistance of the film increases with the increase of time, indicating that the behavior of the defects in the film is m uch different from that of the film deposited on a solid substrate. Th e effects of the liquid substrate are also discussed. (C) 1997 America n Institute of Physics.