Hl. Ge et al., GROWTH-MECHANISM AND ELECTRICAL-PROPERTIES OF METALLIC-FILMS DEPOSITED ON SILICONE OIL SURFACES, Journal of applied physics, 82(11), 1997, pp. 5469-5471
The microstructure and the growth mechanism of the films, which were d
eposited on silicone oil surfaces by the rf-magnetron sputtering metho
d, were studied systematically. It is found that, at the fixed inciden
t rf capacity, the growth rate is not a constant and it depends on bot
h the nominal film thickness and the substrate temperature. The film s
tructure at the micrometer scale is highly sensitive to the substrate
temperature. The de resistance of the film increases with the increase
of time, indicating that the behavior of the defects in the film is m
uch different from that of the film deposited on a solid substrate. Th
e effects of the liquid substrate are also discussed. (C) 1997 America
n Institute of Physics.