THE EFFECT OF AN ASYMMETRIC BAND OF LOCALIZED DEEP DONORS ON THE ELECTRONIC TRANSPORT OF HIGH-PURITY N-TYPE INP

We have investigated the effect of the shape of a band of localized de ep donors on the electronic transport of three high-purity n-type InP epilayers. A model accounting for a broad asymmetric band of localized deep donors or complexes of unknown origin, centered 167 meV below th e conduction band edge with a width of about 245 meV, provided a remar kable description of both the Hall mobility and Hall electronic concen tration in the temperature range of 4.2-300 K. (C) 1997 American Insti tute of Physics.