STRAIN DEPENDENCE OF HOLE MASS AND OPTICAL ANISOTROPY IN (110)-QUANTUM-WELLS

We have investigated the effects of strain and confinement on the biax ial properties of hole masses and optical transitions in strained (110 ) quantum wells. Based on a theory of k x p perturbation and deformati on potential, we present an analytical method to treat the band mixing effects. We have found it crucial to incorporate the spin-orbital cou pling effect in order to quantify the band structure anisotropy. Our c alculations indicate the use of strain and confinement can lead to con siderable changes in the biaxial properties of a (110) quantum well. I n a compressively strained quantum well, the in-plane effective masses of heavy and light holes are shown to have a light component along [( 1) over bar 10] and [001], respectively. In addition, the optical inte rband transitions are found to exhibit similar anisotropy as those of the hole masses. In a tensile strained quantum well, however, the in-p lane anisotropy of hole masses and optical transitions are found to un dergo a character change after passing the anticrossing condition. (C) 1997 American Institute of Physics.