We have observed two absorption bands located at around 1730 and 2960
cm(-1) in the infrared (IR) absorption spectra from undoped GaN sample
s which are grown using low pressure metalorganic vapor phase epitaxy
and irradiated by gamma ray and then exposed to a radio frequency hydr
ogen plasma. Proton implantation followed by gamma-ray irradiation of
the GaN samples can also activate the IR band at around 1730 cm(-1). B
ased on the experimental results, we tentatively ascribe the 1730 cm(-
1) band to the local vibrational modes of Ga-H complexes in the vicini
ty of N vacancies and the 2960 cm(-1) band to those of either N-H comp
lexes in the vicinity of Ga vacancies or C-H complexes. (C) 1997 Ameri
can Institute of Physics.