LOW-TEMPERATURE METAL-INDUCED CRYSTALLIZATION OF AMORPHOUS-SILICON USING A NI SOLUTION

Amorphous silicon (a-Si) was crystallized by metal-induced crystalliza tion (MIG) using a Ni standard absorption solution. The a-Si films spi n-coated with a 5000 ppm Ni solution were crystallized at as low as 50 0 degrees C. Needlelike morphology, developed as a result of the migra tion of NiSi2 precipitates, appears in the MIC poly-Si. The growth of the needlelike crystallites proceeds to a direction parallel to [111]. The a-Si can be fully crystallized at 500 degrees C for 20 h. (C) 199 7 American Institute of Physics.