Ac. Irvine et Rc. Woods, RECOMBINATION CURRENT IN GAAS ALGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS/, International journal of electronics, 83(6), 1997, pp. 761-777
The dependence of the performance of GaAs/AlGaAs finger geometry HBTs
on surface processing and on structural design considerations is inves
tigated. It is found that these factors have significant effect on mes
a edge leakage current and therefore on device gain. However, it is no
ted that the changes effected by annealing and chemical processing are
unstable, and that any improvement or degradation of device performan
ce by these means is progressively reduced on storage in air at room t
emperature.