RECOMBINATION CURRENT IN GAAS ALGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS/

The dependence of the performance of GaAs/AlGaAs finger geometry HBTs on surface processing and on structural design considerations is inves tigated. It is found that these factors have significant effect on mes a edge leakage current and therefore on device gain. However, it is no ted that the changes effected by annealing and chemical processing are unstable, and that any improvement or degradation of device performan ce by these means is progressively reduced on storage in air at room t emperature.