AN ANALYTIC METHOD OF MICROWAVE TRANSISTOR OSCILLATOR DESIGN

An analytic method of microwave transistor oscillator design is develo ped, allowing one to define explicit expressions for optimum values of feedback elements and load through immitance parameters of the active two-port network. A negative resistance concept is used to design a s eries feedback microwave GaAs FET oscillator with optimized feedback e lements and maximum output power in terms of the transistor impedance parameters. A large-signal model for GaAs FET is derived, based on its small-signal Z-parameters and DC characteristics. Numerical results v erify the validity of the design method.