Ga. Collins et al., CHARACTERIZATION OF HIGH-VOLTAGE PULSER PERFORMANCE IN RADIOFREQUENCYPLASMAS, Surface & coatings technology, 93(2-3), 1997, pp. 181-187
The performance of a high voltage pulser in plasma immersion ion impla
ntation is strongly influenced by the plasma load into which it operat
es. There are a number of plasma parameters, such as ion density, pote
ntial distribution and ionisation rate, that affect the formation of t
he cathodic sheath around the workpiece. In turn, these place limitati
ons on the range of voltage, ion current density and duty cycle that i
s possible to achieve with the pulser. In this paper, we present resul
ts of studies into the performance of a 50 kV, 8 A pulser in the ANSTO
PI3 facility (similar to 0.4 m(3)). The plasma is a low pressure radi
ofrequency discharge formed by 300 W of r.f. power at 13.56 MH2 applie
d to a single-loop antenna immersed in a plasma with an ion density of
approximately 10(9) cm(-3) and filling pressure of 0.5-5 x 10(-3) mba
r. The plasma parameters can be altered by varying the r.f. power, the
plasma potential, the gas mixture and the filling pressure. Optical e
mission spectroscopy has shown a large increase in emission from atomi
c species that are sputtered from the surface of the workpiece during
the high voltage pulse. This emission decays very rapidly when the hig
h voltage: pulse is terminated. (C) 1997 Elsevier Science S.A.