SPUTTER AND DIFFUSION-PROCESSES IN A PLASMA IMMERSION DEVICE

Plasma immersion ion implantation (PIII) is a technique for surface mo dification. In contrast to conventional ion implantation techniques th e target is surrounded by plasma and then pulse biased to high negativ e voltages. In our experiment the plasma is generated in a radio frequ ency ion source:with inductive coupling (13.56 MHz) and diffuses into the target processing chamber. In this paper we report on the measurem ents of surface sputtering occurring during oxygen and argon implantat ion into silicon targets. Surface sputtering accounts for the dose lim itation of the implanted ions. By combining vapor-deposition of neutra l atoms with implantation and diffusion we obtained layers of stoichio metric silicon and oxygen ratio with thicknesses of >300 nm. (C) 1997 Elsevier Science S.A.