INCIDENT ION MONITORING DURING PLASMA IMMERSION ION-IMPLANTATION BY DIRECT MEASUREMENTS OF HIGH-ENERGY SECONDARY ELECTRONS

Authors
NAKAMURA K MANDL S BRUTSCHER J GUNZEL R MOLLER W
Citation
K. Nakamura et al., INCIDENT ION MONITORING DURING PLASMA IMMERSION ION-IMPLANTATION BY DIRECT MEASUREMENTS OF HIGH-ENERGY SECONDARY ELECTRONS, Surface & coatings technology, 93(2-3), 1997, pp. 242-246
Citations number
10
Journal title
Surface & coatings technology → ACNP
ISSN journal
02578972
Volume
93
Issue
2-3
Year of publication
1997
Pages
242 - 246
Database
ISI
SICI code
0257-8972(1997)93:2-3<242:IIMDPI>2.0.ZU;2-T
Abstract
The present paper investigates time-resolved monitoring of incident, i ons during plasma immersion ion implantation (PIII) processes on the b asis of high-energy secondary electron measurements with the scintilla tion technique. Taking into consideration the sheath geometry and the secondary electron emission coefficient of the target material, the ex perimental data were in a good agreement with theoretical predictions for dependences on target voltage, pressure and plasma density. (C) 19 97 Elsevier Science S.A.