SHALLOW JUNCTION FORMATION BY PLASMA IMMERSION ION-IMPLANTATION

Authors
SHAO JQ JONES EC CHEUNG NW
Citation
Jq. Shao et al., SHALLOW JUNCTION FORMATION BY PLASMA IMMERSION ION-IMPLANTATION, Surface & coatings technology, 93(2-3), 1997, pp. 254-257
Citations number
7
Journal title
Surface & coatings technology → ACNP
ISSN journal
02578972
Volume
93
Issue
2-3
Year of publication
1997
Pages
254 - 257
Database
ISI
SICI code
0257-8972(1997)93:2-3<254:SJFBPI>2.0.ZU;2-O
Abstract
Shallow junctions formed by BF3 and PH3 PIII were studied. Diodes with good electrical characteristics were obtained on wafers masked by eit her SiO2 or SiO2 plus photoresist patterns. These structures are also compared with diodes fabricated with a conventional ion beam implanter . (C) 1997 Elsevier Science S.A.