Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 mu m wavelength regime

Authors
Ellmers, C Hohnsdorf, F Koch, J Agert, C Leu, S Karaiskaj, D Hofmann, M Stolz, W Ruhle, WW
Citation
C. Ellmers et al., Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 mu m wavelength regime, APPL PHYS L, 74(16), 1999, pp. 2271-2273
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
16
Year of publication
1999
Pages
2271 - 2273
Database
ISI
SICI code
0003-6951(19990419)74:16<2271:U(VSLF>2.0.ZU;2-W
Abstract
(GaIn)(NAs) vertical-cavity surface-emitting lasers for room-temperature em ission at 1.3 mu m wavelength are designed and grown by metal-organic vapor -phase epitaxy using dimethylhydrazine and tertiarybutylarsine. Room-temper ature operation at wavelengths up to 1.285 mu m is achieved with low optica l pumping thresholds between 1.6 and 2.0 kW/cm(2). Stimulated emission dyna mics after femtosecond optical pumping are measured and compare favorably w ith results on (GaIn)As/Ga(PAs)-based structures. (C) 1999 American Institu te of Physics. [S0003-6951(99)03416-6].