Deposition-temperature-dependent stress of capping oxide and its effect onPt/Pb(Zr1-xTix)O-3/Pt ferroelectric capacitor

Two different interlayer dielectric (ILD) materials, electron cyclotron res onance chemical vapor deposition oxide (ECR-OXIDE) and plasma enhanced chem ical vapor deposition TEOS oxide (PE-TEOS), were prepared at 400 and 200 de grees C respectively, on silicon substrates and Pt/Pb(Zr1-xTix)O-3 (PZT)/Pt capacitors. It was found that the ILD deposition temperature is a most imp ortant parameter for minimizing the degradation of remnant polarization (P- r) during the ILD deposition. Since the stress of PZT capacitor strongly de pends on the ILD deposition temperature, the PZT capacitor with PE-TEOS sho wed more compressive stress than that with ECR-OXIDE, which results in seve re P-r degradation of PZT capacitor with PE-TEOS. This large stress effect of PE-TEOS was confirmed by x-ray diffraction (XRD) patterns in which the d spacing of (111) PZT films with PE-TEOS was much larger than that of PZT f ilms with ECR-OXIDE. Therefore, the low ILD deposition temperature is a key parameter for achieving an ILD integration without any P-r degradation. (C ) 1999 American Institute of Physics. [S0003-6951(99)00716-0].