Bj. Koo et al., Deposition-temperature-dependent stress of capping oxide and its effect onPt/Pb(Zr1-xTix)O-3/Pt ferroelectric capacitor, APPL PHYS L, 74(16), 1999, pp. 2286-2288
Two different interlayer dielectric (ILD) materials, electron cyclotron res
onance chemical vapor deposition oxide (ECR-OXIDE) and plasma enhanced chem
ical vapor deposition TEOS oxide (PE-TEOS), were prepared at 400 and 200 de
grees C respectively, on silicon substrates and Pt/Pb(Zr1-xTix)O-3 (PZT)/Pt
capacitors. It was found that the ILD deposition temperature is a most imp
ortant parameter for minimizing the degradation of remnant polarization (P-
r) during the ILD deposition. Since the stress of PZT capacitor strongly de
pends on the ILD deposition temperature, the PZT capacitor with PE-TEOS sho
wed more compressive stress than that with ECR-OXIDE, which results in seve
re P-r degradation of PZT capacitor with PE-TEOS. This large stress effect
of PE-TEOS was confirmed by x-ray diffraction (XRD) patterns in which the d
spacing of (111) PZT films with PE-TEOS was much larger than that of PZT f
ilms with ECR-OXIDE. Therefore, the low ILD deposition temperature is a key
parameter for achieving an ILD integration without any P-r degradation. (C
) 1999 American Institute of Physics. [S0003-6951(99)00716-0].