CdTe(111)B grown on Si(111) by molecular beam epitaxy

We demonstrate the growth of large-area, domain-free CdTe(111) single cryst als on As-passivated Si(111) substrates by molecular beam epitaxy using ZnT e buffer layers. The crystal quality of the CdTe(111)B/ZnTe(111)B/Si(111) f ilms was examined by x-ray diffraction (56 arcs), etch-pit-density (2 x 10( 5) cm(-2)) analysis, and transmission electron microscopy, and was found to be comparable to or better than the best CdTe(111)B films grown directly o n vicinal Si(001). Surface reconstructions were observed by reflection high -energy electron diffraction at different stages. Diffraction intensity osc illations demonstrated the layer-by-layer growth mode of the CdTe surface. An interface model for these films is proposed. (C) 1999 American Institute of Physics. [S0003-6951(99)02916-2].