Nanoscale GaAs metal-semiconductor-metal photodetectors fabricated using nanoimprint lithography

GaAs metal-semiconductor-metal photodetectors (MSM PDs) with a variety of n anoscale finger spacings and widths were fabricated using nanoimprint litho graphy (NIL). Compared with MSM-PDs fabricated using electron-beam lithogra phy and photolithography, the MSM-PDs fabricated using NIL do not show obse rvable degradation in the device characteristics if the imprinting pressure s are kept at 600 psi or below, although they do degrade at higher pressure s. (C) 1999 American Institute of Physics. [S0003-6951(99)01616-2].