From molecular precursors to new materials

Authors
Roesky, HW Park, HS
Citation
Hw. Roesky et Hs. Park, From molecular precursors to new materials, B POL CHEM, 46(3), 1998, pp. 285-288
Citations number
23
Categorie Soggetti
Chemistry
Journal title
BULLETIN OF THE POLISH ACADEMY OF SCIENCES-CHEMISTRY
ISSN journal
02397285 → ACNP
Volume
46
Issue
3
Year of publication
1998
Pages
285 - 288
Database
ISI
SICI code
0239-7285(1998)46:3<285:FMPTNM>2.0.ZU;2-Q
Abstract
Preparation of gallium nitride is described using the single source precurs or (Et2GaNH2)(3). The thin films of GaN formed were characterized using var ious physical methods such as Auger spectroscopy, X-ray diffraction and AFM image of the surface, respectively.