NEARLY PERFECT OUTPUT POWER SATURATION OF THE SEMICONDUCTOR RAMAN LASER

Authors
SUTO K KIMURA T NISHIZAWA J
Citation
K. Suto et al., NEARLY PERFECT OUTPUT POWER SATURATION OF THE SEMICONDUCTOR RAMAN LASER, IEE proceedings. Optoelectronics, 144(2), 1997, pp. 87-90
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic",Optics,Telecommunications
Journal title
IEE proceedings. Optoelectronics → ACNP
ISSN journal
13502433
Volume
144
Issue
2
Year of publication
1997
Pages
87 - 90
Database
ISI
SICI code
1350-2433(1997)144:2<87:NPOPSO>2.0.ZU;2-K
Abstract
Low-threshold semiconductor Raman lasers with a tapered waveguide stru cture with Gap core and AlxGa1-xP cladding layers have been operated i n a quasi CW operation condition. It has been found that the first Sto kes light output power nearly perfectly saturates when the pump power is increased, and this has been attributed to lasing of the second Sto kes light. This effect will be useful for realising a low-noise light wave source.