Electroless deposition of Cu-In-Ga-Se thin films

Authors
Bhattacharya, RN Batchelor, W Noufi, RN
Citation
Rn. Bhattacharya et al., Electroless deposition of Cu-In-Ga-Se thin films, EL SOLID ST, 2(5), 1999, pp. 222-223
Citations number
7
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
ELECTROCHEMICAL AND SOLID STATE LETTERS
ISSN journal
10990062 → ACNP
Volume
2
Issue
5
Year of publication
1999
Pages
222 - 223
Database
ISI
SICI code
1099-0062(199905)2:5<222:EDOCTF>2.0.ZU;2-I
Abstract
Copper-indium-gallium-selenium thin films have been prepared by electroless deposition technique on an Mo/glass substrate. Electroless precursors are prepared by short-circuiting the Mo substrate to the Fe counter electrode. The films are characterized by inductively coupled plasma and X-ray analysi s. The device fabricated using electroless precursor films resulted in a so lar cell efficiency of 12.4%. (C) 1999 The Electrochemical Society. S1099-0 062(98)12-082-5. All rights reserved.