Ba(Ti0.8Sn0.2)O-3 thin films prepared by radio-frequency magnetron sputtering for dynamic random access memory applications

Polycrystalline thin films of Ba(Ti0.8Sn0.2)O-3 100 nm thick were deposited on Pt/TiO2/SiO2/Si(100) substrates by radio-frequency magnetron sputtering at various substrate temperatures. The films crystallized with high (111) diffraction intensity at a substrate temperature of 650 degrees C, had good crystalline quality, and exhibited a large dielectric constant. The dielec tric constant and leakage current of the films increased with an increase o f the intensity ratio of (111)/(110) peaks. This study also established a c orrelation between the dielectric constant, leakage current, and crystallin ity of the films. (C) 1999 The Electrochemical Society. S1099-0062(98)11-09 8-2. All rights reserved.