Circular pseudo-metal oxide semiconductor field effect transistor in silicon-on-insulator - Analytical model, simulation, and measurements

Authors
Munteanu, D Cristoloveanu, S Hovel, H
Citation
D. Munteanu et al., Circular pseudo-metal oxide semiconductor field effect transistor in silicon-on-insulator - Analytical model, simulation, and measurements, EL SOLID ST, 2(5), 1999, pp. 242-243
Citations number
4
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
ELECTROCHEMICAL AND SOLID STATE LETTERS
ISSN journal
10990062 → ACNP
Volume
2
Issue
5
Year of publication
1999
Pages
242 - 243
Database
ISI
SICI code
1099-0062(199905)2:5<242:CPOSFE>2.0.ZU;2-L
Abstract
The pseudo-metal oxide semiconductor field effect transistor (Psi-MOSFET) i s a quick method for detailed electrical characterization of bare silicon-o n-insulator wafers. A recent variant consists in using circular Hg probes. A simple analytical model for the geometrical factor, which is of primary i mportance for circular Psi-MOSFET applications, is presented and validated by 3-D numerical simulations. Measurements on a SIMOX wafer in both accumul ation and inversion are used to test the model. (C) 1999 The Electrochemica l Society. S1099-0062(98)11-085-4. All rights reserved.