Electrical properties of rapid thermal-enhanced low pressure chemical vapor deposited Ta2O5 thin films

Electrical properties of rapid thermal-enhanced low pressure chemical vapor deposited Ta2O5 thin films subjected to an in situ two-step postannealing process were studied. Films treated by rapid thermal annealing in O-2 at 55 0 degrees C for 90 s followed by plasma O-2 at 550 degrees C for 30 s exhib it a leakage current density of 7.91 x 10(-9) A/cm(2) at an applied electri c field of 100 kV/cm and a dielectric constant of similar to 38. The decrea se in leakage current density of the annealed Ta2O5 films in comparison to the as-deposited films is attributed mainly to the effective reduction of c arbon impurities and oxygen vacancies by the two-step postannealing process . (C) 1999 The Electrochemical Society. S1099-0062(98)08-064-X. All rights reserved.