Sealing method of dry-etched AlAs/GaAs top mirrors in vertical cavity surface emitting lasers

Citation
M. Creusen et al., Sealing method of dry-etched AlAs/GaAs top mirrors in vertical cavity surface emitting lasers, EL SOLID ST, 2(2), 1999, pp. 83-85
Citations number
11
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
ELECTROCHEMICAL AND SOLID STATE LETTERS
ISSN journal
10990062 → ACNP
Volume
2
Issue
2
Year of publication
1999
Pages
83 - 85
Database
ISI
SICI code
1099-0062(199902)2:2<83:SMODAT>2.0.ZU;2-B
Abstract
A versatile sealing process for AlAs layers is presented. This sealing prev ents the AlAs layers of AlAs/GaAs top distributed Bragg reflectors from fur ther undesired oxidation during the wet oxidation of the AlAs current const riction layers in vertical cavity surface emitting lasers. This method has been successfully applied to protect the etched pillars in top mirrors alth ough those pillars were plasma dry etched. (C) 1999 The Electrochemical Soc iety. S1099- 0062( 98) 07- 019- 9. All rights reserved.