Low temperature nafion bonding of silicon wafers

Silicon wafer bonding using intermediate submicrometer Nafion layers was in vestigated with emphasis in the low temperature region. Bonding was achieve d by heating Nafion-coated wafer pairs. Infrared images revealed voids at a nnealing temperatures of less than 75 degrees C. In the transition region b etween 75 and 120 degrees C void-free bonds were achieved; however, the Naf ion was chemically unstable. Chemically stable Nafion bond formation can be accomplished at annealing temperatures in excess of 120 degrees C. (C) 199 9 The Electrochemical Society. S1099- 0062( 98) 09- 009- 9. All rights rese rved.