Dual Damascene interconnect of copper and low permittivity dielectric for high performance integrated circuits

Authors
Zhao, B Feiler, D Ramanathan, V Liu, QZ Brongo, M Wu, J Zhang, H Kuei, JC Young, D Brown, J Vo, C Xia, W Chu, C Zhou, J Nguyen, C Tsau, L Dornisch, D Camilletti, L Ding, P Lai, G Chin, B Krishna, N Johnson, M Turner, J Ritzdorf, T Wu, G Cook, L
Citation
B. Zhao et al., Dual Damascene interconnect of copper and low permittivity dielectric for high performance integrated circuits, EL SOLID ST, 1(6), 1998, pp. 276-278
Citations number
14
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
ELECTROCHEMICAL AND SOLID STATE LETTERS
ISSN journal
10990062 → ACNP
Volume
1
Issue
6
Year of publication
1998
Pages
276 - 278
Database
ISI
SICI code
1099-0062(199812)1:6<276:DDIOCA>2.0.ZU;2-3
Abstract
A dual damascene interconnect of Cu wiring and low dielectric constant (low -kappa) intra/interlevel-dielectric (ILD) has been successfully demonstrate d. The low-kappa ILD has led to a significant reduction in intralevel and i nterlevel capacitance. Low interconnect wiring resistance and via resistanc e have been achieved in the Cu/low-kappa dual damascene interconnect with g ood reliability characteristics. (C) 1998 The Electrochemical Society. S109 9-0062(98)07-038-2. All rights reserved.