Preparation of transparent indium oxide film from a chemically deposited precursor

An indium oxide film with a cubic structure was formed on a nonconductive s ubstrate by chemical deposition of indium hydroxide precursor from an aqueo us solution containing an indium nitrate and trimethylamineborane at 333 K, and by heating the precursor at 473-573 K for 1 h. The indium oxide film s howed a resistivity of 33 Omega cm and an optical transmission of 78% at a wavelength of 600 nm. (C) 1998 The Electrochemical Society. S1099-0062(98)0 4-066-8. All rights reserved.