All-optical NAND logic device operating at 1.51-1.55 mu m in Er-doped aluminosilicate glass

Authors
Maeda, Y
Citation
Y. Maeda, All-optical NAND logic device operating at 1.51-1.55 mu m in Er-doped aluminosilicate glass, ELECTR LETT, 35(7), 1999, pp. 582-584
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
7
Year of publication
1999
Pages
582 - 584
Database
ISI
SICI code
0013-5194(19990401)35:7<582:ANLDOA>2.0.ZU;2-H
Abstract
An all-optical NAND logic device derived from the negative nonlinear absorp tion effect has been demonstrated in erbium-doped aluminosilicate glass usi ng 1510-1550 nm laser diodes. The reversed-phase transmitted waveforms were observed at modulation frequencies from 0.2kHz to 1.0GHz. The device has a novel possibility for expanding the capacity of optical networks and compu ters.