Exploiting electro-thermal resonance in high voltage power bipolar devices

Authors
D'Amore, D Maffezzoni, P
Citation
D. D'Amore et P. Maffezzoni, Exploiting electro-thermal resonance in high voltage power bipolar devices, ELECTR LETT, 35(7), 1999, pp. 600-602
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
7
Year of publication
1999
Pages
600 - 602
Database
ISI
SICI code
0013-5194(19990401)35:7<600:EERIHV>2.0.ZU;2-P
Abstract
It is theoretically and experimentally proven that the Fast heating mechani sm that takes Place in high voltage power bipolar transistors can be couple d with the electrical dynamics to obtain stable electro-thermal oscillation s. Finding such a resonance condition allows the experimental extraction of fast thermal transient parameter values.