Fabrication and characterisation of enhanced barrier AlGaN/GaN HFET

Authors
Dang, XZ Welty, RJ Qiao, D Asbeck, PM Lau, SS Yu, ET Boutros, KS Redwing, JM
Citation
Xz. Dang et al., Fabrication and characterisation of enhanced barrier AlGaN/GaN HFET, ELECTR LETT, 35(7), 1999, pp. 602-603
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
7
Year of publication
1999
Pages
602 - 603
Database
ISI
SICI code
0013-5194(19990401)35:7<602:FACOEB>2.0.ZU;2-K
Abstract
An AlGaN/GaN HFET incorporating a piezoelectrically enhanced two-layer barr ier structure has been Fabricated and characterised. The gate leakage curre nt was observed to be suppressed by one order of magnitude, compared to tha t in a conventional AlGaN/GaN HFET. Breakdown voltages in the piezoelectric ally enhanced and conventional HFET structures are similar to 100V and have positive temperature coefficients.