Fabrication technology of polysilicon resistors using novel mixed process for analogue CMOS applications

Authors
Lee, DW Roh, TM Park, HS Kim, J Koo, JG Kim, DY
Citation
Dw. Lee et al., Fabrication technology of polysilicon resistors using novel mixed process for analogue CMOS applications, ELECTR LETT, 35(7), 1999, pp. 603-604
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
7
Year of publication
1999
Pages
603 - 604
Database
ISI
SICI code
0013-5194(19990401)35:7<603:FTOPRU>2.0.ZU;2-P
Abstract
A new mixed doping technology, in which arsenic ions were implanted into a phosphorus-doped polysilicon film, has been developed to obtain extremely l ow temperature coefficient of resistance (TCR) polysilicon resistors. For t he same sheet resistance (R-s) value of 75 Omega/square, the TCR of the pol ysilicon resistor fabricated by the proposed process was similar to 4.3 tim es lower (112ppm/degrees C) than that of the conventional phosphorus-doped polysilicon resistor (479ppm/degrees C).