Dw. Lee et al., Fabrication technology of polysilicon resistors using novel mixed process for analogue CMOS applications, ELECTR LETT, 35(7), 1999, pp. 603-604
A new mixed doping technology, in which arsenic ions were implanted into a
phosphorus-doped polysilicon film, has been developed to obtain extremely l
ow temperature coefficient of resistance (TCR) polysilicon resistors. For t
he same sheet resistance (R-s) value of 75 Omega/square, the TCR of the pol
ysilicon resistor fabricated by the proposed process was similar to 4.3 tim
es lower (112ppm/degrees C) than that of the conventional phosphorus-doped
polysilicon resistor (479ppm/degrees C).