Observation of negative differential resistance in mu c-Si : H/a-Si1-xCx :H double barrier devices

Authors
Yu, ZR Pereyra, I Carreno, MNP
Citation
Zr. Yu et al., Observation of negative differential resistance in mu c-Si : H/a-Si1-xCx :H double barrier devices, JPN J A P 1, 38(3A), 1999, pp. 1317-1319
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
38
Issue
3A
Year of publication
1999
Pages
1317 - 1319
Database
ISI
SICI code
Abstract
This article presents the experimental results on the preparation and chara cterization of mu c-Si:H/a-Si1-xCx:H single barrier (SBD) and double barrie r devices (DBD). For DBDs, very clear negative differential resistance (NDR ) regimes accompanied by oscillations were observed. The observed NDR and o scillations can be explained by the quantum size effect.