Molecular beam epitaxial growth of ZnSe films on vicinal GaAs(110) substrates

We have investigated ZnSe epitaxial layers grown by molecular beam epitaxy on vicinal GaAs(110) substrates using reflection high-energy electron diffr action (RHEED), atomic force microscopy (AFM) and photoluminescence (PL). Z nSe films on vicinal GaAs(110) surfaces misoriented 6 degrees toward (111)A show poor crystal qualify and rough surface morphology with (111) facets. On the other hand, RHEED and AFM observations reveal that ZnSe growth proce eds in a layer-by-layer fashion on vicinal GaAs(110) surfaces misoriented 6 degrees toward (11(1) over bar)B and that the surfaces consist of regular arrays of monoatomic steps. The PL spectra are dominated by the near-band-e dge emission.