Deposition of (100) and (110) textured diamond films on aluminum nitride ceramics via hot filament chemical vapor deposition

Citation
Ng. Shang et al., Deposition of (100) and (110) textured diamond films on aluminum nitride ceramics via hot filament chemical vapor deposition, JPN J A P 1, 38(3A), 1999, pp. 1500-1502
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
38
Issue
3A
Year of publication
1999
Pages
1500 - 1502
Database
ISI
SICI code
Abstract
Textured (100) and (110) diamond films were successfully grown on aluminum nitride ceramics at different substrate temperatures via hot filament chemi cal vapor deposition (HFCVD). The surface morphology and the crystallograph ic properties of the two textured films were characterized by scanning elec tron microscopy and X-ray diffraction. The highest ratios of the diffractio n intensity, I-(400)/I-(111) (about 5.8) of (100) textured films and I-(220 )/I-(111) (about 2.2) of (110) textured films, are greatly larger than that of randomly oriented diamond films (0.08 and 0.25). The optimized conditio ns of textured films on AlN substrates were obtained. The experimental resu lts showed that the substrate temperature played an important role in the t exture types of diamond films, The growth mechanism of the two texture film s is discussed in detail.