New scanning photoluminescence technique for quantitative mapping the surface recombination velocity in InP and related materials

Authors
Krawczyk, S Bejar, M Khoukh, A Blanchet, R Sermage, B Cui, D Pavlidis, D
Citation
S. Krawczyk et al., New scanning photoluminescence technique for quantitative mapping the surface recombination velocity in InP and related materials, JPN J A P 1, 38(2B), 1999, pp. 992-995
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
38
Issue
2B
Year of publication
1999
Pages
992 - 995
Database
ISI
SICI code
Abstract
This paper introduces a new approach, based on room temperature (RT) scanni ng photoluminescence (SPL) measurements, for non-destructive quantitative m apping of the surface or interface recombination velocity in compound semic onductor structures. The developed technique is validated and applied here to spatially resolved evaluation of the surface recombination velocity of I nP substrates and InGaAs(C)/InP heterostructures.