Pressure dependence of photoluminescence in GaAs/partially ordered GaInP interface

We have measured the photoluminescence (PL) spectra of GaAs/GaInP single qu antum wells at pressures up to similar to 5 GPa, and investigated the chara cteristics of the 1.46 eV deep emission band. It has a very long decay time of 200-400 ns. In addition, at normal pressure, unlike the emission from t he GaAs well, a strong blueshift of the spectral position with excitation i ntensity is observed. With increasing pressure, the deep emission shows a s ublinear shift towards higher energy while the GaAs well exhibits a linear shift. The pressure-dependent PL behavior at lower excitation intensity is rather similar to those observed for partially ordered GaInP alloys. These results suggest that the presence of ordered GaInP layers plays an importan t role in the radiative recombination at 1.46 eV, and the 1.46 eV deep emis sion is related to the interface transitions of electrons and holes localiz ed at the heterointerface.