Structural and energy-gap characterization of metalorganic-vapor-phase-epitaxy-grown InAsBi

The structural properties and energy-gap dependence on InBi content and tem perature are investigated for metalorganic-vapor-phase-epitaxy (MOVPE)-grow n InAsBi. All measurement results-X-ray-diffraction, secondary ion mass spe ctroscopy (SIMS), and Rutherford-backscattering-spectroscopy (RBS) channeli ng-show that the layer has good crystalline quality. The energy-gap depende nce on InBi content is evaluated by optical-transmission and low-temperatur e photo luminescence, and it is shown that the dependence can be expressed by a linear equation. The temperature dependence of E-g (Delta E(g/)Delta T ) is evaluated by optical-transmission measurement. The Delta E-g/Delta T o f 0.22 mcV/K obtained for InAs0.963Bi0.037 is smaller than that of InSb (0. 29 meV/K), whose energy gap is smaller than that of InAs0.963Bi0.037.