Properties of In0.52Al0.48As and In0.53Ga0.47As/In0.52Al0.48As quantum well structures grown on (111)B InP substrates by molecular beam epitaxy

In0.52Al0.48As and In0.53Ga0.47As/In0.52Al0.48As quantum well (QW) structur es were grown on (111)B InP substrates by molecular beam epitaxy, and their optical and electrical properties were studied. The photoluminescence (PL) spectrum and electron mobility of the InAlAs layers grown on the (111)B In P substrates were found to have a remarkable dependence on. the V/III ratio and the growth temperature. It was found that the PL peak energy of the In GaAs/InAlAs QWs grown under optimized conditions on the (111)B MP substrate s shows a remarkable red shift compared to that grown on the (100) InP subs trates. An atomic force microscopy observation revealed that the observed r ed shift for the (111)B QW is induced by a large surface step-bunching.