S. Goto et al., Effect of growth conditions on electrical properties of Si-doped In0.52Al0.48As grown by metalorganic vapor phase epitaxy, JPN J A P 1, 38(2B), 1999, pp. 1048-1051
A systematic study of the electrical properties of Si-doped In0.52Al0.48As
grown under various metalorganic vapor phase epitaxy (MOVPE) conditions suc
h as V/III ratio and growth temperature is carried out. It is demonstrated
that either high V/III ratios (greater than or equal to 64) or high growth
temperatures (greater than or equal to 720 degrees C) are necessary for obt
aining good InAlAs electrical properties. For a small V/III ratio (=32) and
low growth temperatures (less than or equal to 700 degrees C), a large dis
crepancy is found in Hall carrier concentration (n(Hall)), ionized impurity
concentration (Nc-v), and Si concentration (N-Si); Nc-v > N-Si > n(Hall);
which can be explained by the dual formation of donor and acceptor deep lev
els. SIMS results suggest that carbon and oxygen impurities are not candida
tes for these deep levels, and other origins such as intrinsic defects, whi
ch are closely related to growth conditions, are applicable.