GaAs and InP nanohole arrays fabricated by reactive beam etching using highly ordered alumina membranes

Authors
Nakao, M Oku, S Tamamura, T Yasui, K Masuda, H
Citation
M. Nakao et al., GaAs and InP nanohole arrays fabricated by reactive beam etching using highly ordered alumina membranes, JPN J A P 1, 38(2B), 1999, pp. 1052-1055
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
38
Issue
2B
Year of publication
1999
Pages
1052 - 1055
Database
ISI
SICI code
Abstract
Highly ordered anodic porous alumina was used as a mask for a reactive beam etching (RBE) to transform the nano channel pattern into III-V semiconduct ors. The alumina mask showed high tolerance to RBE using a Br-2/N-2 mixed g as system. GaAs and InP nanohole arrays with a high aspect ratio and with d iameter uniformity of 2% which was as good as that of the alumina mask, wer e obtained.