Size-controlled formation of decananometer InGaAs quantum wires by selective molecular beam epitaxy on InP patterned substrates

Detailed scanning electron microscopy (SEM), photoluminescence (PL) and mag netoresistance measurements were made for InGaAs ridge quantum wires (QWRs) grown by selective molecular beam epitaxy (MBE) in order to establish a me thod for size-controlled formation of high-quality decananometer wires. The width of our InGaAs ridge QWRs was found to be proportional to the growth time of the bottom InAlAs layer with a rate of about 9.5 nm/min. A minimum wire width of about 35 nm was achieved. The wire widths measured by SEM, PL and magnetoresistance methods agreed reasonably well with each other as we ll as with the design values. The results of PL and magnetotransport measur ements indicated that the present decananometer wires possess good crystall ine and interface qualities as well as strong one-dimensional electron conf inement. The present method was concluded to be powerful for size-controlle d formation of high-quality decananometer InGaAs QWRs.