Temperature dependence of luminescence decay time of InP quantum disks

We measured temperature dependence of luminescence decay time of self-assem bled InP dots in GaInP lattice-matched to GaAs. The radiative lifetime of I nP-dot luminescence is independent of temperature below similar to 40 K and is linear with temperature between similar to 40 and similar to 120 K. The se two features in the two temperature regimes are characteristic of zero-d imensional and two-dimensional structures, respectively. This temperature b ehavior of the lifetime is thought to be caused by the disklike shape of th e InP dots; the dot lateral widths are longer than their heights, and thus they have an intermediate character between zero-dimension and two-dimensio ns.