The strong correlation between interface microstructure and barrier heightin Pt/n-InP Schottky contacts formed by an in situ electrochemical process

In order to investigate the correlation between the microstructure of a met al/semiconductor (M/S) interface and the Schottky barrier height (SBH), Pt Schottky contacts were formed on n-type InP by an in situ electrochemical p rocess under various electrochemical conditions; they were then investigate d using scanning electron microscopy (SEM), current-voltage (I-V) and capac itance-voltage (C-V) measurements. Electrodeposition resulted in the format ion of arrays of nanometer-sized Pt particles whose distribution strongly d epended on electrochemical conditions. The SBH values exhibited a strong co rrelation with the particle distribution, leading to a high SBH value of 0. 86 eV under the condition of the most uniform distribution of the smallest particles. The result is discussed from the viewpoint of the disorder-induc ed gap state (DIGS) model.