Schottky characteristics of InAlAs grown by metal-organic chemical vapor deposition

Schottky characteristics of InAlAs grown by metal-organic chemical vapor de position (MOCVD) have been evaluated. InAlAs Schottky characteristics are s trongly affected by MOCVD growth temperature. The reverse current of InAlAs frown at 700 degrees C is more than one order of magnitude larger than tha t at 750 degrees C. From deep-level transient spectroscopy (DLTS) measureme nts, electron traps with activation energies of 0.45, 0.33 and 0.15 eV have been observed in InAlAs grown at 700 degrees C. The results of C-V, Hall a nd secondary ion mass spectrometry (SIMS) measurements suggest that the tra p is acceptor-type and seems to be related not to impurities but to intrins ic defects. The mechanism of the large reverse current in InAlAs frown at 7 00 degrees C is believed to be due to the conduction through the trap.