Influence of strain compensation on structural and electrical properties of InAlAs/InGaAs HEMT structures grown on InP

Authors
Letartre, X Rojo-Romeo, P Tardy, J Bejar, M Gendry, M Py, MA Beck, M Buhlmann, HJ Ren, L Villar, C Sanz-Hervas, A Serrano, JJ Blanco, JM Aguilar, M Marty, O Souliere, V Monteil, Y
Citation
X. Letartre et al., Influence of strain compensation on structural and electrical properties of InAlAs/InGaAs HEMT structures grown on InP, JPN J A P 1, 38(2B), 1999, pp. 1169-1173
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
38
Issue
2B
Year of publication
1999
Pages
1169 - 1173
Database
ISI
SICI code
Abstract
Strain-compensated InAlAs/lnGaAs HEMT structures, grown on InP substrate, h ave been investigated in terms of structural and electrical properties. Fro m detailed x-ray diffraction (XRD) investigations the compensation index an d the evolution of the strain state were measured. We show that a partial a nd controlled strain compensation significantly improves the structural qua lity and the thermal stability of HEMT structures as well as their electric al properties.