High temperature operation of AlGaInAs ridge waveguide lasers with a p-AlInAs electron stopper layer

1.3 mu m AlGaInAs/InP ridge waveguide lasers with a p-AIInAs electron stopp er layer (ESL) were fabricated and the effect of the ESL was investigated. By inserting an ESL between active and separate confinement heterostructure (SCH) layers, the characteristic temperature of threshold current and slop e efficiency were improved, especially in the higher operating temperature rang, and the maximum operating temperature under CW operation was improved by 20 degrees C. An excellent CW characteristic temperature of 111 K was o btained with operating temperatures between 20 and 80 degrees C and the rec ord high operating temperature of 210 degrees C was achieved with the 700-m u m-long laser under pulse operation. Power reductions at a constant curren t with increasing temperature were determined at 80 degrees C as - 1.27 dB and - 1.67 dB under pulse and CW operations, respectively.