Improved high-temperature and high-power characteristics of 1.3-mu m spot-size converter integrated all-selective metalorganic vapor phase epitaxy grown planar buried heterostructure laser diodes by newly introduced multiple-stripe recombination layers

Multiple-stripe planar buried heterostructure (MS-PBH) was newly developed to improve the high-temperature and high-power characteristics of spot-size converter integrated all-selective metalorganic vapor phase epitaxy (MOVPE ) grown planar buried heterostructure laser diodes (SSC-ASM-PBH LDs). Recom bination-layer stripes were simultaneously grown with the active layer and thickness-tapered waveguide by narrow-stripe selective MOVPE, and inserted in the current-blocking layers. The effect of recombination-layer-stripe in sertion was investigated both theoretically and experimentally. The leakage current suppressed by the inserted recombination-layer stripes resulted in improved high-temperature and high-power characteristics. A maximum output power of 47 mW at 85 degrees C, a high characteristics temperature T-0 val ue of 69 K (25 degrees C-85 degrees C), and a small slope-efficiency degrad ation of 1.1 dB (25 degrees C-85 degrees C) were obtained while maintaining excellent coupling characteristics to a flat-ended single-mode fiber due t o its narrow beam divergence.