Improvement of characteristic temperature in In0.81Ga0.19As/InGaAsP multiple quantum well laser operating at 1.74 mu m for laser monitor

Authors
Ubukata, A Dong, J Matsumoto, K
Citation
A. Ubukata et al., Improvement of characteristic temperature in In0.81Ga0.19As/InGaAsP multiple quantum well laser operating at 1.74 mu m for laser monitor, JPN J A P 1, 38(2B), 1999, pp. 1243-1245
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
38
Issue
2B
Year of publication
1999
Pages
1243 - 1245
Database
ISI
SICI code
Abstract
InGaAs/InGaAsP compressively strained quantum well lasers operating at 1.74 mu m have been fabricated with thin carrier blocking layers sandwiching th e active layer for carrier confinement. A laser characteristic temperature (T-0) of 85 K was obtained, which is the highest value ever reported in InG aAs/InGaAsP lasers in this wavelength range.