Extended cavity lasers in InGaAs-InGaAsP and GaInP-AlGaInP multi-quantum well structure using a sputtered SiO2 technique

Sputtering a thin layer of SiO2 (approximate to 200 nm) followed by high te mperature annealing has recently been found to be very promising in promoti ng quantum well intermixing; The intermixing is thought to be due to point defects generated by the sputtering plasma diffusing through the material d uring a subsequent high temperature anneal. In this paper, we describe the technique using the sputtered SiO2 and subsequent high temperature annealin g,either by rapid thermal Annealer (RTA) or CW Nd:YAG laser operated at 1.0 64 mu m. Differential blue shifts of up to 70 meV and 120 meV have been obt ained for InGaAs-InGaAsP and GaInP-AlGaInP material systems. Extended cavit y lasers have been fabricated and characterised for both material systems.